Перегляд за автором "Indutnyi, I.Z."

Сортувати за: Порядок: Результатів:

  • Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment 
    Dan’ko, V.A.; Bratus, V.Ya.; Indutnyi, I.Z.; Lisovskyy, I.P.; Zlobin, S.O.; Michailovska, K.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) ...
  • Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures 
    Indutnyi, I.Z.; Michailovska, K.V.; Min’ko, V.I.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The effect of treatment in saturated acetone vapors on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited SiOx films is studied. As a result of this treatment followed by ...
  • Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist 
    Dan’ko, V.A.; Dorozinsky, G.V.; Indutnyi, I.Z.; Myn’ko, V.I.; Ushenin, Yu.V.; Shepeliavyi, P.E.; Lukaniuk, M.V.; Korchovyi, A.A.; Khrystosenko, R.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    This study reports on development of the interference lithography (IL) technique applying the resist based on chalcogenide glass films for fabrication of gold chips in the nform of periodic surface nanostructures for surface ...
  • Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures 
    Michailovska, K.V.; Indutnyi, I.Z.; Shepeliavyi, P.E.; Dan’ko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral ...
  • Photostimulated etching of germanium chalcogenide films 
    Dan’ko, V.A.; Indutnyi, I.Z.; Myn’ko, V.I.; Shepeliavyi, P.E.; Lukyanyuk, M.V.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral ...
  • Polarization conversion effect in obliquely deposited SiOx films 
    Sopinskyy, M.V.; Indutnyi, I.Z.; Michailovska, K.V.; Shepeliavyi, P.E.; Tkach, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this ...
  • Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix 
    Michailovska, K.V.; Indutnyi, I.Z.; Kudryavtsev, O.O.; Sopinskyy, M.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Investigated in this paper have been polarization properties of photoluminescence in solid and porous nc-Si−SiOx light emitting structures passivated in HF vapor. These structures were produced by thermal vacuum evaporation ...
  • Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers 
    Indutnyi, I.Z.; Shepeliavyi, P.E.; Indutnyi, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), ∆Eg, of As₂(S,Se)₃ nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the ...